The Si-Photonic Modulator Using Three- Waveguides Coupler Structure
Abstract
We proposed and demonstrate the Si-modulator
using three-waveguides coupler structure for the first time. By
using three-waveguide structure can decrease the coupling
lengthcontrary to conventional directional coupler structure. For
the modulation operation, pn diode is employed to have junction
at the only one waveguide. The proposed structure was
fabricated using CMOS-compatible process and shows the
compact device size about ~500 μm2 which is much smaller than
MZI modulator structure. By applying forward bias voltage of
1.2 V, π-phase shift is achieved with Vsw∙L ~ 0.23 V∙mm. Finally,
it shows operation speed up to 3 Gbps with extinction ratio of 3
dB which is faster than carrier injection using p-i-n diode. Itcan
affordable for the operation speed up to 3 Gbps using carrier
injection of pn diode by applying forward bias. We expect that
performance of device can be enhanced using more sophisticated
fabrication process and can be used as the new structure of Siphotonic
modulator.
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